Infineon CoolMOS Type N-Channel MOSFET, 8.5 A, 700 V N, 3-Pin TO-220
- RS Stock No.:
- 217-2500
- Mfr. Part No.:
- IPAN70R600P7SXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
Kr.190 70
(exc. VAT)
Kr.238 40
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 400 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | Kr. 3,814 | Kr. 190,70 |
| 100 - 200 | Kr. 3,711 | Kr. 185,55 |
| 250 - 450 | Kr. 3,613 | Kr. 180,65 |
| 500 - 1200 | Kr. 3,519 | Kr. 175,95 |
| 1250 + | Kr. 3,432 | Kr. 171,60 |
*price indicative
- RS Stock No.:
- 217-2500
- Mfr. Part No.:
- IPAN70R600P7SXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.5A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | CoolMOS | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 20.5nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 82W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.8 mm | |
| Length | 16.1mm | |
| Height | 29.87mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.5A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series CoolMOS | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 20.5nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 82W | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Width 4.8 mm | ||
Length 16.1mm | ||
Height 29.87mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of: Efficiency and thermals Ease-of-use EMI behaviour.
Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off
Highly performant technology
Low switching losses (E oss)
Highly efficient
Excellent thermal behaviour
Allowing high speed switching
Integrated protection Zener diode
Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V
Finely graduated portfolio
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