Infineon CoolMOS Type N-Channel MOSFET, 8.5 A, 700 V Enhancement, 3-Pin TO-251

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Bulk discount available

Subtotal (1 tube of 75 units)*

Kr.647 40 

(exc. VAT)

Kr.809 25 

(inc. VAT)

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  • Shipping from 05. oktober 2026
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Units
Per unit
Per Tube*
75 - 75Kr. 8,632Kr. 647,40
150 - 300Kr. 6,733Kr. 504,98
375 - 675Kr. 6,301Kr. 472,58
750 - 1800Kr. 5,869Kr. 440,18
1875 +Kr. 5,438Kr. 407,85

*price indicative

RS Stock No.:
222-4712
Mfr. Part No.:
IPSA70R600P7SAKMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8.5A

Maximum Drain Source Voltage Vds

700V

Package Type

TO-251

Series

CoolMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

600mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

10.5nC

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

43.1W

Maximum Gate Source Voltage Vgs

16 V

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Height

6.1mm

Standards/Approvals

No

Width

2.38 mm

Length

6.6mm

Automotive Standard

No

The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.

Product validation acc. JEDEC Standard

Low switching losses (Eoss)

Integrated ESD protection diode

Excellent thermal behaviour

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