Infineon CoolMOS Type N-Channel MOSFET, 8.5 A, 700 V Enhancement, 3-Pin TO-251 IPSA70R600P7SAKMA1
- RS Stock No.:
- 222-4713
- Mfr. Part No.:
- IPSA70R600P7SAKMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 20 units)*
Kr.169 80
(exc. VAT)
Kr.212 20
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 26. oktober 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | Kr. 8,49 | Kr. 169,80 |
| 100 - 180 | Kr. 6,624 | Kr. 132,48 |
| 200 - 480 | Kr. 6,201 | Kr. 124,02 |
| 500 - 980 | Kr. 5,772 | Kr. 115,44 |
| 1000 + | Kr. 5,343 | Kr. 106,86 |
*price indicative
- RS Stock No.:
- 222-4713
- Mfr. Part No.:
- IPSA70R600P7SAKMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.5A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | CoolMOS | |
| Package Type | TO-251 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 43.1W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 10.5nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.6mm | |
| Width | 2.38 mm | |
| Standards/Approvals | No | |
| Height | 6.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.5A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series CoolMOS | ||
Package Type TO-251 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 43.1W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 10.5nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Length 6.6mm | ||
Width 2.38 mm | ||
Standards/Approvals No | ||
Height 6.1mm | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.
Product validation acc. JEDEC Standard
Low switching losses (Eoss)
Integrated ESD protection diode
Excellent thermal behaviour
Related links
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- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
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