Infineon CoolMOS Type N-Channel MOSFET, 4 A, 700 V Enhancement, 3-Pin TO-251

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Subtotal (1 tube of 75 units)*

Kr.318 825 

(exc. VAT)

Kr.398 55 

(inc. VAT)

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  • Plus 1 500 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Tube*
75 +Kr. 4,251Kr. 318,83

*price indicative

RS Stock No.:
222-4708
Mfr. Part No.:
IPSA70R1K4P7SAKMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

700V

Series

CoolMOS

Package Type

TO-251

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

4.7nC

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

22.7W

Maximum Gate Source Voltage Vgs

16 V

Maximum Operating Temperature

150°C

Length

6.6mm

Standards/Approvals

No

Height

6.1mm

Width

2.38 mm

Automotive Standard

No

The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.

Product validation acc. JEDEC Standard

Low switching losses (Eoss)

Integrated ESD protection diode

Excellent thermal behaviour

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