Infineon CoolMOS Type N-Channel MOSFET, 10 A, 700 V Enhancement, 3-Pin TO-251 IPSA70R450P7SAKMA1
- RS Stock No.:
- 222-4711
- Mfr. Part No.:
- IPSA70R450P7SAKMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 15 units)*
Kr.132 48
(exc. VAT)
Kr.165 60
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 1 395 unit(s) shipping from 19. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 135 | Kr. 8,832 | Kr. 132,48 |
| 150 - 360 | Kr. 8,389 | Kr. 125,84 |
| 375 - 735 | Kr. 8,206 | Kr. 123,09 |
| 750 - 1485 | Kr. 7,688 | Kr. 115,32 |
| 1500 + | Kr. 7,154 | Kr. 107,31 |
*price indicative
- RS Stock No.:
- 222-4711
- Mfr. Part No.:
- IPSA70R450P7SAKMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-251 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 50W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Typical Gate Charge Qg @ Vgs | 13.1nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Height | 6.1mm | |
| Standards/Approvals | No | |
| Length | 6.6mm | |
| Width | 2.38 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-251 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 50W | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Typical Gate Charge Qg @ Vgs 13.1nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Height 6.1mm | ||
Standards/Approvals No | ||
Length 6.6mm | ||
Width 2.38 mm | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.
Product validation acc. JEDEC Standard
Low switching losses (Eoss)
Integrated ESD protection diode
Excellent thermal behaviour
Related links
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251 IPSA70R600P7SAKMA1
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251 IPSA70R1K4P7SAKMA1
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251 IPSA70R900P7SAKMA1
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 700 V Enhancement, 3-Pin TO-251