Infineon CoolMOS N-Channel MOSFET, 10 A, 700 V Enhancement, 3-Pin TO-251 IPSA70R450P7SAKMA1
- RS Stock No.:
- 222-4710
- Mfr. Part No.:
- IPSA70R450P7SAKMA1
- Brand:
- Infineon
Get a bulk buy discount
Add 150 more to save 13%
View bulk pricing optionsSubtotal (1 tube of 75 units)*
Kr. 521,93
(exc. VAT)
Kr. 652,43
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- 1 350 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* | Saving |
|---|---|---|---|
| 75 - 75 | Kr. 6,959 | Kr. 521,93 | - |
| 150 - 300 | Kr. 5,985 | Kr. 448,88 | 13% |
| 375 - 675 | Kr. 5,638 | Kr. 422,85 | 18% |
| 750 - 1800 | Kr. 5,22 | Kr. 391,50 | 24% |
| 1875 + | Kr. 4,872 | Kr. 365,40 | 29% |
*price indicative
- RS Stock No.:
- 222-4710
- Mfr. Part No.:
- IPSA70R450P7SAKMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-251 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 900mV | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Typical Gate Charge Qg @ Vgs | 13.1nC | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.38mm | |
| Standards/Approvals | No | |
| Length | 6.6mm | |
| Height | 6.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-251 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 900mV | ||
Maximum Gate Source Voltage Vgs 16V | ||
Typical Gate Charge Qg @ Vgs 13.1nC | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Operating Temperature 150°C | ||
Width 2.38mm | ||
Standards/Approvals No | ||
Length 6.6mm | ||
Height 6.1mm | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.
Product validation acc. JEDEC Standard
Low switching losses (Eoss)
Integrated ESD protection diode
Excellent thermal behaviour
Related links
- Infineon CoolMOS N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251 IPSA70R450P7SAKMA1
- Infineon CoolMOS N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251 IPSA70R900P7SAKMA1
- Infineon CoolMOS N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251 IPSA70R600P7SAKMA1
- Infineon CoolMOS N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251 IPSA70R1K4P7SAKMA1
- Infineon CoolMOS N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-251 IPS60R1K0CEAKMA1
- Infineon CoolMOS N-Channel MOSFET 800 V Enhancement, 3-Pin TO-251 IPU80R4K5P7AKMA1