Infineon CoolMOS Type N-Channel MOSFET, 1.5 A, 800 V Enhancement, 3-Pin TO-251 IPU80R4K5P7AKMA1

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Subtotal (1 pack of 20 units)*

Kr.105 22 

(exc. VAT)

Kr.131 52 

(inc. VAT)

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Units
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Per Pack*
20 - 80Kr. 5,261Kr. 105,22
100 - 180Kr. 4,044Kr. 80,88
200 - 480Kr. 3,781Kr. 75,62
500 - 980Kr. 3,524Kr. 70,48
1000 +Kr. 2,368Kr. 47,36

*price indicative

Packaging Options:
RS Stock No.:
222-4717
Mfr. Part No.:
IPU80R4K5P7AKMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

1.5A

Maximum Drain Source Voltage Vds

800V

Series

CoolMOS

Package Type

TO-251

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.5Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

13W

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

4nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Width

6.22 mm

Length

6.73mm

Standards/Approvals

No

Height

2.41mm

Automotive Standard

No

The Infineon design of Cool MOS™ P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation.

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

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