Infineon CoolMOS N-Channel MOSFET, 1.5 A, 800 V Enhancement, 3-Pin TO-251 IPU80R4K5P7AKMA1

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Subtotal (1 tube of 75 units)*

Kr. 396,75

(exc. VAT)

Kr. 495,75

(inc. VAT)

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Units
Per unit
Per Tube*
75 - 75Kr. 5,29Kr. 396,75
150 - 300Kr. 4,073Kr. 305,48
375 - 675Kr. 3,809Kr. 285,68
750 - 1800Kr. 3,543Kr. 265,73
1875 +Kr. 3,279Kr. 245,93

*price indicative

RS Stock No.:
222-4716
Mfr. Part No.:
IPU80R4K5P7AKMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

1.5A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-251

Series

CoolMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.5Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

13W

Typical Gate Charge Qg @ Vgs

4nC

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

900mV

Maximum Operating Temperature

150°C

Length

6.73mm

Standards/Approvals

No

Height

2.41mm

Width

6.22mm

Automotive Standard

No

The Infineon design of Cool MOS™ P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation.

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

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