Infineon IPS70R Type N-Channel MOSFET, 8.5 A, 700 V Enhancement, 3-Pin TO-251 IPS70R600P7SAKMA1

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Subtotal (1 pack of 20 units)*

Kr.117 36 

(exc. VAT)

Kr.146 70 

(inc. VAT)

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Units
Per unit
Per Pack*
20 - 80Kr. 5,868Kr. 117,36
100 - 180Kr. 5,051Kr. 101,02
200 - 480Kr. 4,748Kr. 94,96
500 - 980Kr. 4,405Kr. 88,10
1000 +Kr. 4,107Kr. 82,14

*price indicative

Packaging Options:
RS Stock No.:
222-4934
Mfr. Part No.:
IPS70R600P7SAKMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

8.5A

Maximum Drain Source Voltage Vds

700V

Series

IPS70R

Package Type

TO-251

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

600mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

10.5nC

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

43.1W

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Length

6.73mm

Standards/Approvals

No

Width

2.4 mm

Height

6.22mm

Automotive Standard

No

The Infineon developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V

Allowing high speed switching

Integrated protection Zener diode

Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V

Finely graduated portfolio

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