Infineon IPS70R Type N-Channel MOSFET, 6 A, 700 V Enhancement, 3-Pin TO-251

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Subtotal (1 tube of 75 units)*

Kr.303 075 

(exc. VAT)

Kr.378 825 

(inc. VAT)

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  • Plus 675 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Tube*
75 +Kr. 4,041Kr. 303,08

*price indicative

RS Stock No.:
222-4935
Mfr. Part No.:
IPS70R900P7SAKMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

700V

Series

IPS70R

Package Type

TO-251

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

900mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

6.8nC

Maximum Power Dissipation Pd

30.5W

Maximum Gate Source Voltage Vgs

16 V

Maximum Operating Temperature

150°C

Width

2.4 mm

Standards/Approvals

No

Length

6.73mm

Height

6.22mm

Automotive Standard

No

The Infineon developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of:

Allowing high speed switching

Integrated protection Zener diode

Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V

Finely graduated portfolio

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