Infineon IPS70R Type N-Channel MOSFET, 6 A, 700 V Enhancement, 3-Pin TO-251 IPS70R900P7SAKMA1

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Subtotal (1 pack of 25 units)*

Kr.133 975 

(exc. VAT)

Kr.167 475 

(inc. VAT)

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Units
Per unit
Per Pack*
25 - 100Kr. 5,359Kr. 133,98
125 - 225Kr. 4,178Kr. 104,45
250 - 600Kr. 3,908Kr. 97,70
625 - 1225Kr. 3,642Kr. 91,05
1250 +Kr. 3,372Kr. 84,30

*price indicative

Packaging Options:
RS Stock No.:
222-4936
Mfr. Part No.:
IPS70R900P7SAKMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

700V

Series

IPS70R

Package Type

TO-251

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

900mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

6.8nC

Maximum Power Dissipation Pd

30.5W

Maximum Gate Source Voltage Vgs

16 V

Minimum Operating Temperature

-40°C

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Height

6.22mm

Width

2.4 mm

Standards/Approvals

No

Length

6.73mm

Automotive Standard

No

The Infineon developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of:

Allowing high speed switching

Integrated protection Zener diode

Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V

Finely graduated portfolio

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