Infineon IPS70R Type N-Channel MOSFET, 8.5 A, 700 V Enhancement, 3-Pin TO-251

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Subtotal (1 tube of 75 units)*

Kr.341 925 

(exc. VAT)

Kr.427 425 

(inc. VAT)

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  • 1 425 unit(s) ready to ship
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Units
Per unit
Per Tube*
75 +Kr. 4,559Kr. 341,93

*price indicative

RS Stock No.:
222-4932
Mfr. Part No.:
IPS70R600P7SAKMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

8.5A

Maximum Drain Source Voltage Vds

700V

Package Type

TO-251

Series

IPS70R

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

600mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

10.5nC

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

43.1W

Maximum Operating Temperature

150°C

Width

2.4 mm

Standards/Approvals

No

Height

6.22mm

Length

6.73mm

Automotive Standard

No

The Infineon developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V

Allowing high speed switching

Integrated protection Zener diode

Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V

Finely graduated portfolio

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