Infineon IPN Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin SOT-223 IPN60R360P7SATMA1

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Subtotal (1 pack of 20 units)*

Kr.131 04 

(exc. VAT)

Kr.163 80 

(inc. VAT)

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Per Pack*
20 - 80Kr. 6,552Kr. 131,04
100 - 180Kr. 5,235Kr. 104,70
200 - 480Kr. 4,914Kr. 98,28
500 - 980Kr. 4,586Kr. 91,72
1000 +Kr. 4,259Kr. 85,18

*price indicative

Packaging Options:
RS Stock No.:
217-2543
Mfr. Part No.:
IPN60R360P7SATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

600V

Package Type

SOT-223

Series

IPN

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

360mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

36nC

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

111W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Height

1.1mm

Width

8.8 mm

Length

8.8mm

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolMOS™ P7 superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes CoolMOS™ P7 in SOT-223 a perfect fit for its target applications.

Best-fit performance superjunction technology

Cost-effective package solution

Best-in-class price/performance ratio

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