Infineon IPN Type N-Channel MOSFET, 10 A, 700 V Enhancement, 3-Pin SOT-223

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Subtotal (1 reel of 3000 units)*

Kr.10 824 00 

(exc. VAT)

Kr.13 530 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 - 3000Kr. 3,608Kr. 10 824,00
6000 +Kr. 3,428Kr. 10 284,00

*price indicative

RS Stock No.:
217-2547
Mfr. Part No.:
IPN70R450P7SATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

700V

Series

IPN

Package Type

SOT-223

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

450mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

13.1nC

Maximum Power Dissipation Pd

6.2W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.8mm

Length

6.7mm

Width

3.7 mm

Automotive Standard

No

The Infineon CoolMOS™ P7 superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes CoolMOS™ P7 in SOT-223 a perfect fit for its target applications.

Extremely low losses due to very low FOMR DS(on)*Qg and RDS(on)*Eoss

Excellent thermal behaviour

Integrated ESD protection diode

Low switching losses(Eoss)

Product validation acc. JEDEC Standard

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