Infineon IPN Type N-Channel MOSFET, 6.5 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R750P7SATMA1

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Subtotal (1 pack of 50 units)*

Kr.292 70 

(exc. VAT)

Kr.365 90 

(inc. VAT)

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50 - 50Kr. 5,854Kr. 292,70
100 - 200Kr. 4,272Kr. 213,60
250 - 450Kr. 3,983Kr. 199,15
500 - 1200Kr. 3,688Kr. 184,40
1250 +Kr. 3,453Kr. 172,65

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Packaging Options:
RS Stock No.:
217-2550
Mfr. Part No.:
IPN70R750P7SATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6.5A

Maximum Drain Source Voltage Vds

700V

Package Type

SOT-223

Series

IPN

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

750mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Forward Voltage Vf

0.9V

Maximum Power Dissipation Pd

6.7W

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

8.3nC

Maximum Operating Temperature

150°C

Width

3.7 mm

Height

1.8mm

Length

6.7mm

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolMOS™ P7 superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes CoolMOS™ P7 in SOT-223 a perfect fit for its target applications.

Best-fit performance superjunction technology

Cost-effective package solution

Best-in-class price/performance ratio

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