Infineon IPN Type N-Channel MOSFET, 6 A, 600 V, 3-Pin SOT-223
- RS Stock No.:
- 244-2270
- Mfr. Part No.:
- IPN60R600PFD7SATMA1
- Brand:
- Infineon
Subtotal (1 reel of 3000 units)*
Kr.7 941 00
(exc. VAT)
Kr.9 927 00
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 28. september 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | Kr. 2,647 | Kr. 7 941,00 |
*price indicative
- RS Stock No.:
- 244-2270
- Mfr. Part No.:
- IPN60R600PFD7SATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | SOT-223 | |
| Series | IPN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type SOT-223 | ||
Series IPN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon 600V CoolMOS™ PFD7 superjunction MOSFET (IPN60R2K0PFD7S) complements the CoolMOS™ 7 offering for consumer applications.This product family is tailored to ultrahigh power density as well as highest efficiency designs.
Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss
Low switching losses Eoss, excellent thermal behavior
Fast body diode
Wide range portfolio of RDS(on) and package variations
Enables high power density designs and small form factors
Enables efficiency gains at higher switching frequencies
Excellent commutation ruggedness
Easy to select the right parts and optimize the design
Related links
- Infineon N-Channel MOSFET 600 V, 3-Pin SOT-223 IPN60R600PFD7SATMA1
- Infineon N-Channel MOSFET 600 V, 3-Pin SOT-223 BSP125H6433XTMA1
- Infineon N-Channel MOSFET 600 V, 3-Pin SOT-223 IPN60R360P7SATMA1
- Infineon N-Channel MOSFET 600 V, 3-Pin DPAK IPD60R600P7SAUMA1
- Infineon N-Channel MOSFET 600 V, 3-Pin DPAK IPD60R600P7ATMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 800 V, 3-Pin SOT-223 IPN80R900P7ATMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 700 V, 3-Pin SOT-223 IPN70R900P7SATMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 950 V, 3-Pin SOT-223 IPN95R1K2P7ATMA1