Infineon IPN Type N-Channel MOSFET, 3 A, 650 V, 3-Pin SOT-223

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Subtotal (1 reel of 3000 units)*

Kr.6 042 00 

(exc. VAT)

Kr.7 554 00 

(inc. VAT)

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  • Shipping from 28. september 2026
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Units
Per unit
Per Reel*
3000 - 3000Kr. 2,014Kr. 6 042,00
6000 +Kr. 1,913Kr. 5 739,00

*price indicative

RS Stock No.:
244-2266
Mfr. Part No.:
IPN60R2K0PFD7SATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3A

Maximum Drain Source Voltage Vds

650V

Package Type

SOT-223

Series

IPN

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

81W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon 600V CoolMOS™ PFD7 superjunction MOSFET (IPN60R2K0PFD7S) complements the CoolMOS™ 7 offering for consumer applications.This product family is tailored to ultrahigh power density as well as highest efficiency designs.

Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss

Low switching losses Eoss,excellent thermal behavior

Fast body diode

Wide range portfolio of RDS(on) and package variations

Integrated zener diode

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