Infineon IPN Type N-Channel MOSFET, 6.5 A, 700 V Enhancement, 3-Pin SOT-223

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Subtotal (1 reel of 3000 units)*

Kr.7 848 00 

(exc. VAT)

Kr.9 810 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 - 3000Kr. 2,616Kr. 7 848,00
6000 +Kr. 2,485Kr. 7 455,00

*price indicative

RS Stock No.:
217-2549
Mfr. Part No.:
IPN70R750P7SATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6.5A

Maximum Drain Source Voltage Vds

700V

Series

IPN

Package Type

SOT-223

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

750mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

6.7W

Minimum Operating Temperature

-40°C

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

8.3nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.7mm

Width

3.7 mm

Height

1.8mm

Automotive Standard

No

The Infineon CoolMOS™ P7 superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes CoolMOS™ P7 in SOT-223 a perfect fit for its target applications.

Best-fit performance superjunction technology

Cost-effective package solution

Best-in-class price/performance ratio

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