Infineon IPN Type N-Channel MOSFET, 10 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R450P7SATMA1

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Kr.79 42 

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Kr.99 28 

(inc. VAT)

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Per Pack*
20 - 80Kr. 3,971Kr. 79,42
100 - 180Kr. 3,226Kr. 64,52
200 - 480Kr. 3,146Kr. 62,92
500 - 980Kr. 3,066Kr. 61,32
1000 +Kr. 2,992Kr. 59,84

*price indicative

Packaging Options:
RS Stock No.:
217-2548
Mfr. Part No.:
IPN70R450P7SATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

700V

Series

IPN

Package Type

SOT-223

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

450mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

6.2W

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

13.1nC

Maximum Operating Temperature

150°C

Height

1.8mm

Standards/Approvals

No

Width

3.7 mm

Length

6.7mm

Automotive Standard

No

The Infineon CoolMOS™ P7 superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes CoolMOS™ P7 in SOT-223 a perfect fit for its target applications.

Extremely low losses due to very low FOMR DS(on)*Qg and RDS(on)*Eoss

Excellent thermal behaviour

Integrated ESD protection diode

Low switching losses(Eoss)

Product validation acc. JEDEC Standard

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