Infineon OptiMOS-TM3 Type N-Channel MOSFET, 45 A, 80 V N, 3-Pin TO-252 IPD135N08N3GATMA1

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Subtotal (1 pack of 20 units)*

Kr.139 62 

(exc. VAT)

Kr.174 52 

(inc. VAT)

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Units
Per unit
Per Pack*
20 - 80Kr. 6,981Kr. 139,62
100 - 180Kr. 6,631Kr. 132,62
200 - 480Kr. 6,352Kr. 127,04
500 - 980Kr. 6,073Kr. 121,46
1000 +Kr. 5,656Kr. 113,12

*price indicative

Packaging Options:
RS Stock No.:
218-3041
Mfr. Part No.:
IPD135N08N3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

80V

Package Type

TO-252

Series

OptiMOS-TM3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

13.5mΩ

Channel Mode

N

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

19nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

79W

Maximum Operating Temperature

175°C

Width

6.22 mm

Standards/Approvals

No

Length

6.73mm

Height

2.41mm

Automotive Standard

No

The Infineon OptiMOS™ series N-channel power MOSFET. The OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).

N-channel, normal level

100% avalanche tested

Pb-free plating

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