Infineon OptiMOS-TM3 Type N-Channel MOSFET, 114 A, 40 V Enhancement, 8-Pin TSDSON

Subtotal (1 reel of 5000 units)*

Kr. 19 700,00

(exc. VAT)

Kr. 24 600,00

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 15 000 unit(s) shipping from 01 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
5000 +Kr. 3,94Kr. 19 700,00

*price indicative

RS Stock No.:
222-4626
Mfr. Part No.:
BSZ028N04LSATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

114A

Maximum Drain Source Voltage Vds

40V

Package Type

TSDSON

Series

OptiMOS-TM3

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.8mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

63W

Typical Gate Charge Qg @ Vgs

32nC

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Length

5.35mm

Standards/Approvals

No

Height

1.2mm

Automotive Standard

No

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy