Infineon OptiMOS-TM3 Type N-Channel MOSFET, 40 A, 100 V Enhancement, 8-Pin TSDSON BSZ150N10LS3GATMA1

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Subtotal (1 pack of 10 units)*

Kr.135 04 

(exc. VAT)

Kr.168 80 

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40Kr. 13,504Kr. 135,04
50 - 90Kr. 12,847Kr. 128,47
100 - 240Kr. 12,275Kr. 122,75
250 - 490Kr. 11,749Kr. 117,49
500 +Kr. 10,948Kr. 109,48

*price indicative

Packaging Options:
RS Stock No.:
222-4634
Mfr. Part No.:
BSZ150N10LS3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS-TM3

Package Type

TSDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

15mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

26nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

63W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

5.35mm

Standards/Approvals

No

Height

1.2mm

Width

6.1 mm

Automotive Standard

No

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

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