Infineon OptiMOS-TM3 Type N-Channel MOSFET, 114 A, 40 V Enhancement, 8-Pin TSDSON BSZ028N04LSATMA1
- RS Stock No.:
- 222-4627
- Mfr. Part No.:
- BSZ028N04LSATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 15 units)*
Kr.116 565
(exc. VAT)
Kr.145 71
(inc. VAT)
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In Stock
- 16 815 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 60 | Kr. 7,771 | Kr. 116,57 |
| 75 - 135 | Kr. 7,383 | Kr. 110,75 |
| 150 - 360 | Kr. 7,077 | Kr. 106,16 |
| 375 - 735 | Kr. 6,765 | Kr. 101,48 |
| 750 + | Kr. 6,299 | Kr. 94,49 |
*price indicative
- RS Stock No.:
- 222-4627
- Mfr. Part No.:
- BSZ028N04LSATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 114A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS-TM3 | |
| Package Type | TSDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 63W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.35mm | |
| Standards/Approvals | No | |
| Width | 6.1 mm | |
| Height | 1.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 114A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS-TM3 | ||
Package Type TSDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 63W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 5.35mm | ||
Standards/Approvals No | ||
Width 6.1 mm | ||
Height 1.2mm | ||
Automotive Standard No | ||
The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Pb-free lead plating; RoHS compliant
Superior thermal resistance 100% avalanche tested
Halogen-free according to IEC61249-2-23
Related links
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