Infineon HEXFET Type N-Channel MOSFET, 27 A, 55 V TO-252

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Subtotal (1 reel of 2000 units)*

Kr.8 964 00 

(exc. VAT)

Kr.11 204 00 

(inc. VAT)

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Units
Per unit
Per Reel*
2000 - 2000Kr. 4,482Kr. 8 964,00
4000 +Kr. 4,258Kr. 8 516,00

*price indicative

RS Stock No.:
218-3110
Mfr. Part No.:
IRFR4105TRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

27A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Maximum Drain Source Resistance Rds

45mΩ

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.045V

Typical Gate Charge Qg @ Vgs

34nC

Maximum Power Dissipation Pd

68W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

6.22mm

Length

6.73mm

Standards/Approvals

No

Width

2.39 mm

Automotive Standard

No

The Infineon HEXFET series 55V N-channel power MOSFET. It utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This MOSFET is designed for surface mounting using vapour phase, infrared, or wave soldering technique.

Ultra Low On-Resistance

Fast Switching

Lead free

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