Infineon HEXFET Type N-Channel MOSFET, 27 A, 55 V TO-252 IRFR4105TRPBF

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Subtotal (1 pack of 25 units)*

Kr.213 425 

(exc. VAT)

Kr.266 775 

(inc. VAT)

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  • Plus 10 150 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Pack*
25 +Kr. 8,537Kr. 213,43

*price indicative

Packaging Options:
RS Stock No.:
218-3111
Mfr. Part No.:
IRFR4105TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

27A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

45mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

68W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

34nC

Forward Voltage Vf

0.045V

Maximum Operating Temperature

175°C

Height

6.22mm

Length

6.73mm

Standards/Approvals

No

Width

2.39 mm

Automotive Standard

No

The Infineon HEXFET series 55V N-channel power MOSFET. It utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This MOSFET is designed for surface mounting using vapour phase, infrared, or wave soldering technique.

Ultra Low On-Resistance

Fast Switching

Lead free

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