Infineon HEXFET Type N-Channel MOSFET, 128 A, 75 V, 3-Pin TO-263

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Subtotal (1 reel of 800 units)*

Kr.11 651 20 

(exc. VAT)

Kr.14 564 00 

(inc. VAT)

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  • 1 600 unit(s) ready to ship
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Units
Per unit
Per Reel*
800 - 800Kr. 14,564Kr. 11 651,20
1600 +Kr. 13,836Kr. 11 068,80

*price indicative

RS Stock No.:
218-3117
Mfr. Part No.:
IRFS3307ZTRRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

128A

Maximum Drain Source Voltage Vds

75V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

5.8mΩ

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

110nC

Maximum Power Dissipation Pd

230W

Maximum Operating Temperature

175°C

Width

4.83 mm

Length

10.67mm

Height

9.65mm

Standards/Approvals

No

Automotive Standard

No

The Infineon HEXFET series single N-Channel Power MOSFET integrated with D2PAK (TO-263) type package.

Fully Characterized Capacitance and Avalanche SOA

Enhanced body diode dV/dt and dI/dt Capability

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