Infineon HEXFET Type N-Channel MOSFET, 23 A, 30 V, 3-Pin TO-252

Bulk discount available
View bulk pricing options

Subtotal (1 reel of 2000 units)*

Kr. 5 840,00

(exc. VAT)

Kr. 7 300,00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 20 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
Per Reel*
2000 - 2000Kr. 2,92Kr. 5 840,00
4000 +Kr. 2,774Kr. 5 548,00

*price indicative

RS Stock No.:
218-3127
Mfr. Part No.:
IRLR2703TRPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

23A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

65mΩ

Maximum Power Dissipation Pd

341W

Typical Gate Charge Qg @ Vgs

162nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

20.7mm

Length

15.87mm

Automotive Standard

No

The Infineon HEXFET series N-channel power MOSFET. It utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This MOSFET is designed for surface mounting using vapour phase, infrared, or wave soldering techniques.

Ultra Low On-Resistance

Fast Switching

Fully Avalanche Rated

Lead free

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy