Infineon HEXFET Type N-Channel MOSFET, 23 A, 30 V TO-252 IRLR2703TRPBF

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Subtotal (1 pack of 25 units)*

Kr.57 625 

(exc. VAT)

Kr.72 025 

(inc. VAT)

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Units
Per unit
Per Pack*
25 +Kr. 2,305Kr. 57,63

*price indicative

Packaging Options:
RS Stock No.:
218-3128
Mfr. Part No.:
IRLR2703TRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

23A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Maximum Drain Source Resistance Rds

65mΩ

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

341W

Typical Gate Charge Qg @ Vgs

162nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

5.31 mm

Length

15.87mm

Height

20.7mm

Standards/Approvals

No

Automotive Standard

No

The Infineon HEXFET series N-channel power MOSFET. It utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This MOSFET is designed for surface mounting using vapour phase, infrared, or wave soldering techniques.

Ultra Low On-Resistance

Fast Switching

Fully Avalanche Rated

Lead free

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