MPN

STMicroelectronics SCTH70N 1 MOSFET, 90 A, 1200 V, 7-Pin H2PAK-7 SCTH70N120G2V-7

RS Stock No.:: 219-4223
Mfr. Part No.:: SCTH70N120G2V-7
Brand:: STMicroelectronics

STMicroelectronics SCTH70N 1 MOSFET, 90 A, 1200 V, 7-Pin H2PAK-7 SCTH70N120G2V-7

Subtotal (1 reel of 1000 units)*

Kr. 377 913,00

(exc. VAT)

Kr. 472 391,00

(inc. VAT)

Stock information currently inaccessible - Please check back later

Units	Per unit	Per Reel*
1000 +	Kr. 377,913	Kr. 377 913,00

*price indicative

RS Stock No.:: 219-4223
Mfr. Part No.:: SCTH70N120G2V-7
Brand:: STMicroelectronics

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	STMicroelectronics
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	90A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	H2PAK-7
	Series	SCTH70N
	Mount Type	Surface Mount
	Pin Count	7
	Maximum Drain Source Resistance Rds	0.21Ω
	Number of Elements per Chip	1

	Select all
	Brand STMicroelectronics
	Product Type MOSFET
	Maximum Continuous Drain Current Id 90A
	Maximum Drain Source Voltage Vds 1200V
	Package Type H2PAK-7
	Series SCTH70N
	Mount Type Surface Mount
	Pin Count 7
	Maximum Drain Source Resistance Rds 0.21Ω
	Number of Elements per Chip 1

Datasheet - SCTH70N120G2V-7

The STMicroelectronics silicon carbide power MOSFET device has been developed using ST’s Advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very high operating junction temperature capability (TJ = 175 °C)

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitances

STMicroelectronics SCTH70N 1 MOSFET, 90 A, 1200 V, 7-Pin H2PAK-7 SCTH70N120G2V-7

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