Infineon HEXFET Type N-Channel MOSFET & Diode, 62 A, 55 V Enhancement, 3-Pin TO-252 AUIRFR48ZTRL

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Subtotal (1 pack of 5 units)*

Kr.148 11 

(exc. VAT)

Kr.185 14 

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 20Kr. 29,622Kr. 148,11
25 - 45Kr. 28,166Kr. 140,83
50 - 120Kr. 25,306Kr. 126,53
125 - 245Kr. 22,788Kr. 113,94
250 +Kr. 21,69Kr. 108,45

*price indicative

Packaging Options:
RS Stock No.:
220-7347
Mfr. Part No.:
AUIRFR48ZTRL
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

62A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

11mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

40nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

91W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

6.22mm

Height

2.39mm

Width

6.73 mm

Automotive Standard

AEC-Q101

The Infineon AUIRFR48ZTRL specifically designed for automotive applications, this HEXFET power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. It is use in Automotive applications and a wide variety of other applications.

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

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