Infineon HEXFET Type N-Channel MOSFET & Diode, 77 A, 40 V Enhancement, 3-Pin TO-252 IRFR3504ZTRPBF

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Subtotal (1 pack of 10 units)*

Kr.94 82 

(exc. VAT)

Kr.118 52 

(inc. VAT)

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Units
Per unit
Per Pack*
10 +Kr. 9,482Kr. 94,82

*price indicative

Packaging Options:
RS Stock No.:
220-7494
Mfr. Part No.:
IRFR3504ZTRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

77A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

9mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

45nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

90W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

6.73mm

Width

2.39 mm

Height

6.22mm

Distrelec Product Id

304-39-422

Automotive Standard

No

The Infineon Strong IRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard surface mount package

Silicon optimized for applications switching below <100kHz

Wide availability from distribution partners

Industry standard qualification level

Standard pinout allows for drop in replacement

High performance in low frequency applications

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