Infineon CoolGaN N-Channel MOSFET, 12.5 A, 600 V Enhancement, 8-Pin HSOF IGT60R190D1SATMA1

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Subtotal (1 unit)*

Kr. 174,35

(exc. VAT)

Kr. 217,94

(inc. VAT)

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  • Shipping from 14 August 2028
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Units
Per unit
1 - 9Kr. 174,35
10 - 99Kr. 159,93
100 - 249Kr. 147,35
250 - 499Kr. 137,05
500 +Kr. 133,16

*price indicative

Packaging Options:
RS Stock No.:
222-4638
Mfr. Part No.:
IGT60R190D1SATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

12.5A

Maximum Drain Source Voltage Vds

600V

Series

CoolGaN

Package Type

HSOF

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

190mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. Cool MOS™ P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.

Increased MOSFET dv/dt ruggedness

Extremely low losses due to very low FOM Rdson*Qg and Eoss

Very high commutation ruggedness

Pb-free plating Halogen free mold compound

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