Infineon CoolGaN Type N-Channel MOSFET, 10 A, 600 V Enhancement, 8-Pin LSON IGLD60R190D1AUMA3

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Subtotal (1 unit)*

Kr.42 67 

(exc. VAT)

Kr.53 34 

(inc. VAT)

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1 - 9Kr. 42,67
10 - 24Kr. 40,50
25 - 49Kr. 39,70
50 - 99Kr. 37,18
100 +Kr. 34,55

*price indicative

Packaging Options:
RS Stock No.:
232-0419
Mfr. Part No.:
IGLD60R190D1AUMA3
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

600V

Package Type

LSON

Series

CoolGaN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

190mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V enhancement-mode power transistor offers fast turn-on and turn-off speed, minimum switching losses and enables simple half-bridge topologies with the highest efficiency. The gallium nitride CoolGaN 600V series is qualified according to a comprehensive GaN-tailored qualification well beyond existing standards. Its improves system efficiency, improves power density and enables higher operating frequency.

Ultrafast switching

No reverse-recovery charge

Capable of reverse conduction

Low gate charge, low output charge

Superior commutation ruggedness

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