Infineon IMBF1 Type N-Channel MOSFET, 5.2 A, 1700 V Enhancement, 7-Pin TO-263 IMBF170R1K0M1XTMA1

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Subtotal (1 pack of 2 units)*

Kr.94 97 

(exc. VAT)

Kr.118 712 

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 18Kr. 47,485Kr. 94,97
20 - 48Kr. 39,47Kr. 78,94
50 - 98Kr. 36,55Kr. 73,10
100 - 198Kr. 34,205Kr. 68,41
200 +Kr. 31,805Kr. 63,61

*price indicative

Packaging Options:
RS Stock No.:
222-4849
Mfr. Part No.:
IMBF170R1K0M1XTMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

5.2A

Maximum Drain Source Voltage Vds

1700V

Series

IMBF1

Package Type

TO-263

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

1Ω

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolSiC™ 1700 V, 1000 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power applications.

Optimized for fly-back topologies

Extremely low switching loss

12 V / 0 V gate-source voltage compatible with fly-back controllers

Fully controllable dV/dt for EMI optimization

SMD package with enhanced creepage and clearance distances, > 7 mm

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