Infineon IMBF1 Type N-Channel MOSFET, 7.4 A, 1700 V Enhancement, 7-Pin TO-263 IMBF170R650M1XTMA1

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Subtotal (1 pack of 2 units)*

Kr.120 78 

(exc. VAT)

Kr.150 98 

(inc. VAT)

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Units
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Per Pack*
2 - 18Kr. 60,39Kr. 120,78
20 - 48Kr. 54,91Kr. 109,82
50 - 98Kr. 51,31Kr. 102,62
100 - 198Kr. 47,705Kr. 95,41
200 +Kr. 44,045Kr. 88,09

*price indicative

Packaging Options:
RS Stock No.:
222-4851
Mfr. Part No.:
IMBF170R650M1XTMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

7.4A

Maximum Drain Source Voltage Vds

1700V

Series

IMBF1

Package Type

TO-263

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

650mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolSiC™ 1700 V, 650 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power applications.

Optimized for fly-back topologies

Extremely low switching loss

12 V / 0 V gate-source voltage compatible with fly-back controllers

Fully controllable dV/dt for EMI optimization

SMD package with enhanced creepage and clearance distances, > 7 mm

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