Vishay TrenchFET Type N-Channel MOSFET, 150 A, 200 V Enhancement, 3-Pin TO-220 SUP90100E-GE3
- RS Stock No.:
- 228-2992
- Mfr. Part No.:
- SUP90100E-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr.88 77
(exc. VAT)
Kr.110 962
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 388 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | Kr. 44,385 | Kr. 88,77 |
| 20 - 48 | Kr. 41,755 | Kr. 83,51 |
| 50 - 98 | Kr. 37,75 | Kr. 75,50 |
| 100 - 198 | Kr. 35,465 | Kr. 70,93 |
| 200 + | Kr. 33,29 | Kr. 66,58 |
*price indicative
- RS Stock No.:
- 228-2992
- Mfr. Part No.:
- SUP90100E-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | TrenchFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10.9mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 72.8nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series TrenchFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10.9mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 72.8nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay N-Channel 200 V (D-S) MOSFET.
100 % Rg and UIS tested
Related links
- Vishay TrenchFET Dual N-Channel MOSFET 200 V, 3-Pin TO-220 SUP90100E-GE3
- Vishay TrenchFET Dual N-Channel MOSFET 100 V, 7-Pin D2PAK SUM70030M-GE3
- Vishay TrenchFET Dual N-Channel MOSFET 40 V, 7-Pin D2PAK SUM40014M-GE3
- Vishay TrenchFET N-Channel MOSFET 200 V, 3-Pin D2PAK SUM90100E-GE3
- Vishay TrenchFET Dual N-Channel MOSFET 20 V, 8-Pin SO-8 SI4204DY-T1-GE3
- Vishay TrenchFET Dual N-Channel MOSFET 25 V, 8-Pin PowerPAK SO-8 SIRA20BDP-T1-GE3
- Vishay TrenchFET Dual N-Channel MOSFET 100 V, 8-Pin SO-8 Si4090BDY-T1-GE3
- Vishay TrenchFET Dual N-Channel MOSFET 100 V, 8-Pin SO-8 Si4056ADY-T1-GE3
