Infineon AUIRF Type P-Channel MOSFET, 13 A, 100 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 3000 units)*

Kr.35 913 00 

(exc. VAT)

Kr.44 892 00 

(inc. VAT)

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Per Reel*
3000 +Kr. 11,971Kr. 35 913,00

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RS Stock No.:
229-1741
Mfr. Part No.:
AUIRFR5410TRL
Brand:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

100V

Series

AUIRF

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

205mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.6V

Maximum Power Dissipation Pd

66W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

58nC

Maximum Operating Temperature

150°C

Height

2.39mm

Width

6.73 mm

Standards/Approvals

No

Length

6.22mm

Automotive Standard

AEC-Q101

The Infineon p channel MOSFET utilizes the latest processing techniques to achieve low on resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications.

It is lead free

It is RoHS compliant

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