Infineon AUIRF Type P-Channel MOSFET, 13 A, 100 V Enhancement, 3-Pin TO-252 AUIRFR5410TRL
- RS Stock No.:
- 229-1742
- Mfr. Part No.:
- AUIRFR5410TRL
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.147 05
(exc. VAT)
Kr.183 80
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 8 540 unit(s) shipping from 19. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | Kr. 29,41 | Kr. 147,05 |
| 25 - 45 | Kr. 25,90 | Kr. 129,50 |
| 50 - 120 | Kr. 24,412 | Kr. 122,06 |
| 125 - 245 | Kr. 22,652 | Kr. 113,26 |
| 250 + | Kr. 20,912 | Kr. 104,56 |
*price indicative
- RS Stock No.:
- 229-1742
- Mfr. Part No.:
- AUIRFR5410TRL
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | AUIRF | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 205mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 66W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Forward Voltage Vf | -1.6V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.22mm | |
| Standards/Approvals | No | |
| Width | 6.73 mm | |
| Height | 2.39mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series AUIRF | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 205mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 66W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Forward Voltage Vf -1.6V | ||
Maximum Operating Temperature 150°C | ||
Length 6.22mm | ||
Standards/Approvals No | ||
Width 6.73 mm | ||
Height 2.39mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon p channel MOSFET utilizes the latest processing techniques to achieve low on resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications.
It is lead free
It is RoHS compliant
Related links
- Infineon AUIRF Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon AUIRF Type P-Channel MOSFET 150 V Enhancement, 3-Pin TO-252
- Infineon AUIRF Type P-Channel MOSFET 150 V Enhancement, 3-Pin TO-252 AUIRFR6215TRL
- Infineon AUIRF Type P-Channel MOSFET 150 V Enhancement, 3-Pin TO-263
- Infineon AUIRF Type P-Channel MOSFET 150 V Enhancement, 3-Pin TO-263 AUIRF6215STRL
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 IRFR5410TRPBF
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 IRFR5410TRLPBF
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252