Infineon AUIRF Type P-Channel MOSFET, 13 A, 150 V Enhancement, 3-Pin TO-252 AUIRFR6215TRL
- RS Stock No.:
- 229-1744
- Mfr. Part No.:
- AUIRFR6215TRL
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr. 157,19
(exc. VAT)
Kr. 196,49
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 24 December 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 31,438 | Kr. 157,19 |
| 50 - 120 | Kr. 27,684 | Kr. 138,42 |
| 125 - 245 | Kr. 26,084 | Kr. 130,42 |
| 250 - 495 | Kr. 24,208 | Kr. 121,04 |
| 500 + | Kr. 22,33 | Kr. 111,65 |
*price indicative
- RS Stock No.:
- 229-1744
- Mfr. Part No.:
- AUIRFR6215TRL
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | AUIRF | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 295mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.6V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 110W | |
| Typical Gate Charge Qg @ Vgs | 66nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.39mm | |
| Width | 6.73 mm | |
| Length | 6.22mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series AUIRF | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 295mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.6V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 110W | ||
Typical Gate Charge Qg @ Vgs 66nC | ||
Maximum Operating Temperature 175°C | ||
Height 2.39mm | ||
Width 6.73 mm | ||
Length 6.22mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon single p channel HEXFET power MOSFET in a D-pack package allows repetitive avalanche up to Tjmax. It has fast switching speed and it is lead free.
It is RoHS compliant and AEC qualified
It has 175°C operating temperature
Related links
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- Infineon HEXFET Type P-Channel MOSFET -150 V TO-252