STMicroelectronics STB37N60 Type N-Channel MOSFET, 28 A, 600 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 1000 units)*

Kr.45 129 00 

(exc. VAT)

Kr.56 411 00 

(inc. VAT)

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Units
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Per Reel*
1000 +Kr. 45,129Kr. 45 129,00

*price indicative

RS Stock No.:
233-3038
Mfr. Part No.:
STB37N60DM2AG
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

28A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

STB37N60

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

94mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

210W

Forward Voltage Vf

1.6V

Typical Gate Charge Qg @ Vgs

54nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

4.6mm

Standards/Approvals

AEC-Q101

Length

15.85mm

Width

10.4 mm

Automotive Standard

AEC-Q101

The STMicroelectronics high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Designed for automotive applications and AEC-Q101 qualified

Fast-recovery body diode

Extremely low gate charge and input capacitance

Low on-resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

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