Vishay EF Type N-Channel MOSFET, 28 A, 600 V Enhancement, 3-Pin TO-263 SiHB28N60EF-GE3

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Subtotal (1 pack of 2 units)*

Kr.140 94 

(exc. VAT)

Kr.176 18 

(inc. VAT)

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Last RS stock
  • Final 642 unit(s), ready to ship
Units
Per unit
Per Pack*
2 - 18Kr. 70,47Kr. 140,94
20 - 48Kr. 66,24Kr. 132,48
50 - 98Kr. 63,435Kr. 126,87
100 - 198Kr. 56,40Kr. 112,80
200 +Kr. 52,795Kr. 105,59

*price indicative

Packaging Options:
RS Stock No.:
903-4504
Mfr. Part No.:
SiHB28N60EF-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

28A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

EF

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

123mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

250W

Maximum Operating Temperature

150°C

Width

9.65 mm

Height

4.83mm

Length

10.67mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor


Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current

Low figure-of-merit (FOM)

Low input capacitance (Ciss)

Increased robustness due to low Reverse Recovery Charge

Ultra low gate charge (Qg)

MOSFET Transistors, Vishay Semiconductor


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