STMicroelectronics STB37N60 Type N-Channel MOSFET, 28 A, 600 V Enhancement, 3-Pin TO-263 STB37N60DM2AG
- RS Stock No.:
- 233-3039
- Mfr. Part No.:
- STB37N60DM2AG
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 unit)*
Kr.72 76
(exc. VAT)
Kr.90 95
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 970 unit(s) shipping from 19. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | Kr. 72,76 |
| 5 - 9 | Kr. 69,21 |
| 10 - 24 | Kr. 62,35 |
| 25 - 49 | Kr. 56,17 |
| 50 + | Kr. 53,08 |
*price indicative
- RS Stock No.:
- 233-3039
- Mfr. Part No.:
- STB37N60DM2AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 28A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | STB37N60 | |
| Package Type | TO-263 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 94mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Maximum Power Dissipation Pd | 210W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 10.4 mm | |
| Standards/Approvals | AEC-Q101 | |
| Length | 15.85mm | |
| Height | 4.6mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 28A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series STB37N60 | ||
Package Type TO-263 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 94mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Maximum Power Dissipation Pd 210W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 10.4 mm | ||
Standards/Approvals AEC-Q101 | ||
Length 15.85mm | ||
Height 4.6mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Designed for automotive applications and AEC-Q101 qualified
Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Related links
- STMicroelectronics STB37N60 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- STMicroelectronics STB37N60 Type N-Channel MOSFET 1200 V Enhancement, 3-Pin H2PAK
- STMicroelectronics STB37N60 Type N-Channel MOSFET 1200 V Enhancement, 3-Pin H2PAK STH12N120K5-2
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 SiHB28N60EF-GE3
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- STMicroelectronics MDmesh DM2 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- STMicroelectronics MDmesh DM2 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh DM2 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 STF35N60DM2