ROHM Type N-Channel MOSFET, 4 A, 650 V Enhancement, 3-Pin TO-252 R6504END3TL1

Subtotal (1 reel of 2500 units)*

Kr.17 922 50 

(exc. VAT)

Kr.22 402 50 

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +Kr. 7,169Kr. 17 922,50

*price indicative

RS Stock No.:
235-2680
Mfr. Part No.:
R6504END3TL1
Brand:
ROHM
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Brand

ROHM

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.05Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

15nC

Maximum Power Dissipation Pd

58W

Maximum Operating Temperature

150°C

Length

6.4mm

Standards/Approvals

No

Width

2.4 mm

Height

10.4mm

Automotive Standard

No

The ROHM R6xxxENx series are low-noise products, super Junction MOSFET, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.

Low on-resistance

Fast switching speed

Parallel use is easy

Pb-free plating

RoHS compliant

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