Infineon CoolMOS Type N-Channel MOSFET, 22 A, 700 V, 3-Pin TO-247 IPW65R110CFD7XKSA1
- RS Stock No.:
- 236-3674
- Mfr. Part No.:
- IPW65R110CFD7XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr.117 13
(exc. VAT)
Kr.146 412
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 214 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | Kr. 58,565 | Kr. 117,13 |
| 10 - 18 | Kr. 55,60 | Kr. 111,20 |
| 20 - 48 | Kr. 50,05 | Kr. 100,10 |
| 50 - 98 | Kr. 45,13 | Kr. 90,26 |
| 100 + | Kr. 42,785 | Kr. 85,57 |
*price indicative
- RS Stock No.:
- 236-3674
- Mfr. Part No.:
- IPW65R110CFD7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | CoolMOS | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 127W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.13mm | |
| Standards/Approvals | No | |
| Height | 21.1mm | |
| Width | 5.21 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series CoolMOS | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 127W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 16.13mm | ||
Standards/Approvals No | ||
Height 21.1mm | ||
Width 5.21 mm | ||
Automotive Standard No | ||
The Infineon CoolMOS super junction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies. It is ideally suited for industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. It has drain current of 22 A.
Excellent hard-commutation ruggedness
Extra safety margin for designs with increased bus voltage
Enabling increased power density
Outstanding light-load efficiency in industrial SMPS applications
Improved full-load efficiency in industrial SMPS applications
Price competitiveness compared to alternative offerings in the market
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