Infineon IQE Type N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN IQE065N10NM5CGATMA1

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Subtotal (1 pack of 2 units)*

Kr.51 16 

(exc. VAT)

Kr.63 96 

(inc. VAT)

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2 +Kr. 25,58Kr. 51,16

*price indicative

Packaging Options:
RS Stock No.:
240-6642
Mfr. Part No.:
IQE065N10NM5CGATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

253A

Maximum Drain Source Voltage Vds

30V

Package Type

PQFN

Series

IQE

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.85mΩ

Forward Voltage Vf

0.73V

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Maximum Gate Source Voltage Vgs

16 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOSTM 5 100V PQFN 3.3x3.3 Source-Down features 100 V and low RDS(on) of 6.5 mOhm. It offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities. Furthermore, the higher efficiency, the reduced active cooling requirements and the effective layout for thermal management are benefits at the system level.

Improved PCB losses

Enabling highest power density and performance

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