Nexperia PSMN4R2 2 Type N-Channel MOSFET, 42 A, 40 V, 8-Pin LFPAK56D
- RS Stock No.:
- 243-4874
- Mfr. Part No.:
- PSMN4R2-40VSHX
- Brand:
- Nexperia
Subtotal (1 reel of 1500 units)*
Kr.22 840 50
(exc. VAT)
Kr.28 551 00
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- 1 500 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1500 + | Kr. 15,227 | Kr. 22 840,50 |
*price indicative
- RS Stock No.:
- 243-4874
- Mfr. Part No.:
- PSMN4R2-40VSHX
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 42A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK56D | |
| Series | PSMN4R2 | |
| Pin Count | 8 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -20 V | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Maximum Power Dissipation Pd | 46W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 42A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK56D | ||
Series PSMN4R2 | ||
Pin Count 8 | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -20 V | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Maximum Power Dissipation Pd 46W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Nexperia Dual, standard level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using Next power S3 technology. An internal connection is made between the source (S1) of the high-side FET to the drain (D2) of the low-side FET, making the device ideal to use as a half-bridge switch in high-performance PWM and space constrained motor drive applications.
Reduced PCB layout complexity
Module shrinkage through reduced component count
Lower parasitic inductance to support higher efficiency
Low power losses, high power density
Superior avalanche performance
Repetitive avalanche rated
LFPAK copper clip packaging provides high robustness and reliability
Handheld power tools, portable appliance and space constrained applications
Brushless or brushed DC motor drive
DC-to-DC systems
LED lighting
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