Vishay Dual SiZF5300DT 2 Type N-Channel MOSFET, 125 A, 30 V, 12-Pin PowerPAIR 3 x 3FS SIZF5300DT-T1-GE3
- RS Stock No.:
- 252-0293
- Mfr. Part No.:
- SIZF5300DT-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.132 25
(exc. VAT)
Kr.165 30
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 6 040 unit(s) shipping from 26. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 26,45 | Kr. 132,25 |
| 50 - 120 | Kr. 24,848 | Kr. 124,24 |
| 125 - 245 | Kr. 22,492 | Kr. 112,46 |
| 250 - 495 | Kr. 21,142 | Kr. 105,71 |
| 500 + | Kr. 19,814 | Kr. 99,07 |
*price indicative
- RS Stock No.:
- 252-0293
- Mfr. Part No.:
- SIZF5300DT-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 125A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAIR 3 x 3FS | |
| Series | SiZF5300DT | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 0.00351Ω | |
| Maximum Power Dissipation Pd | 56.8W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Typical Gate Charge Qg @ Vgs | 9.5nC | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Height | 3.3mm | |
| Length | 3.3mm | |
| Standards/Approvals | No | |
| Width | 3.3 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 125A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAIR 3 x 3FS | ||
Series SiZF5300DT | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 0.00351Ω | ||
Maximum Power Dissipation Pd 56.8W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Typical Gate Charge Qg @ Vgs 9.5nC | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Height 3.3mm | ||
Length 3.3mm | ||
Standards/Approvals No | ||
Width 3.3 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The Field-Effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.
TrenchFET Gen V power MOSFET
Symmetric dual N-channel
Flip chip technology optimal thermal design
High side and low side MOSFETs form optimized
Combination for 50 % duty cycle
Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency
For high frequency swi
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