Vishay Type N-Channel MOSFET, 141 A, -40 V Enhancement, 8-Pin PowerPAK 1212-8 SQS180ELNW-T1_GE3

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Subtotal (1 pack of 10 units)*

Kr.88 20 

(exc. VAT)

Kr.110 20 

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 90Kr. 8,82Kr. 88,20
100 - 240Kr. 8,294Kr. 82,94
250 - 490Kr. 7,505Kr. 75,05
500 - 990Kr. 7,058Kr. 70,58
1000 +Kr. 6,612Kr. 66,12

*price indicative

Packaging Options:
RS Stock No.:
252-0324
Mfr. Part No.:
SQS180ELNW-T1_GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

141A

Maximum Drain Source Voltage Vds

-40V

Package Type

PowerPAK 1212-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.01mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

192W

Typical Gate Charge Qg @ Vgs

94nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

6.15mm

Width

3.3 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages.

TrenchFET Gen IV power MOSFET

AEC-Q101 qualified

100 % Rg and UIS tested

Wettable flank terminals

Low thermal resistance with 0.75 mm profile

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