Infineon HEXFET Type N-Channel MOSFET, 40 A, 60 V PQFN IRFH5406TRPBF

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Subtotal (1 pack of 5 units)*

Kr.98 39 

(exc. VAT)

Kr.122 99 

(inc. VAT)

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Last RS stock
  • Final 2 035 unit(s), ready to ship
Units
Per unit
Per Pack*
5 - 45Kr. 19,678Kr. 98,39
50 - 120Kr. 18,854Kr. 94,27
125 - 245Kr. 18,35Kr. 91,75
250 - 495Kr. 17,87Kr. 89,35
500 +Kr. 17,434Kr. 87,17

*price indicative

Packaging Options:
RS Stock No.:
257-9375
Mfr. Part No.:
IRFH5406TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

60V

Package Type

PQFN

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

14.4mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

46W

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

21nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Height

0.9mm

Automotive Standard

No

The Infineon IRFH series is the 60V single n channel strong IRFET power mosfet in a PQFN 5x6 package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.

Industry standard surface mount power package

Product qualification according to JEDEC standard

Silicon optimized for applications switching below 100 kHz

Softer body diode compared to previous silicon generation

Wide portfolio available

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