Infineon HEXFET Type N-Channel MOSFET, 110 A, 60 V TO-263

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Subtotal (1 reel of 800 units)*

Kr.8 812 00 

(exc. VAT)

Kr.11 015 20 

(inc. VAT)

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Units
Per unit
Per Reel*
800 - 800Kr. 11,015Kr. 8 812,00
1600 +Kr. 10,464Kr. 8 371,20

*price indicative

RS Stock No.:
257-9439
Mfr. Part No.:
IRFS7540TRLPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

60V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Maximum Drain Source Resistance Rds

5.1mΩ

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

88nC

Maximum Power Dissipation Pd

160W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRFS series is the 60V single n channel HEXFET power mosfet in a Lead Free D2 Pak package.

Product qualification according to JEDEC standard

Optimized for 10 V gate drive voltage (called normal level)

Silicon optimized for applications switching below 100 kHz

Softer body diode compared to previous silicon generation

Industry standard surface mount power package

Capable of being wave soldered

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